PART |
Description |
Maker |
JDH2S01T |
UHF Band Mixer Diode Silicon Epitaxial Schottky Barrier Type UHF Band Mixer
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Toshiba Corporation
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BAT29-AR2 BAT29-AZX |
SILICON, UHF BAND, MIXER DIODE, DO-35
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STMICROELECTRONICS
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1N5712-AR1 |
SILICON, VHF-UHF BAND, MIXER DIODE, DO-35
|
STMICROELECTRONICS
|
BA283-TAP |
DIODE SILICON, VHF BAND, MIXER DIODE, DO-35, HALOGEN FREE AND ROHS COMPLIANT PACKAGE-2, Microwave Mixer Diode
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Vishay Semiconductors
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BA1283-GS08 |
DIODE SILICON, VHF BAND, MIXER DIODE, HERMETIC SEALED, GLASS, MICROMELF-2, Microwave Mixer Diode
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Vishay Semiconductors
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KDV154 KDV154A KDV154B |
TV VHF, UHF tuner AFC VCO for UHF band radio VARIABLE CAPACITANCE DIODE SILICON EPITAXIAL PLANAR DIODE(TV VHF,UHF TUNER AFC VCO FOR UHF BAND RADIO)
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Korea Electronics (KEC) KEC(Korea Electronics)
|
5082-2350 50822350 |
MEDIUM BARRIER SCHOTTKY DIODE SILICON, MEDIUM BARRIER SCHOTTKY, VHF-UHF BAND, MIXER DIODE From old datasheet system
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Advanced Semiconductor, Inc.
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HSMS-2829 HSMS-2827 HSMS-2828 HSMS-2823 HSMS-282B |
SILICON, C BAND, MIXER DIODE RF混频检测器二极 RF mixer/detector diode
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AGILENT TECHNOLOGIES INC
|
MA2C856 |
Band Switching Diodes SILICON, VHF BAND, MIXER DIODE, DO-34
|
Panasonic, Corp. PANASONIC[Panasonic Semiconductor]
|
BAT14-03 BAT14-03W Q62702-A1103 BAT1403W |
Silicon Schottky Diode (DBS mixer application to 12GHz Medium barrier type Low capacitance) SILICON, MEDIUM BARRIER SCHOTTKY, X BAND, MIXER DIODE From old datasheet system
|
SIEMENS AG SIEMENS[Siemens Semiconductor Group]
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BAT14-014 BAT14-034 BAT14-044 BAT14-064 BAT14-074 |
Silicon Schottky Diodes (Medium barrier diodes for detector and mixer applications Hermetical ceramic package) SILICON, MEDIUM BARRIER SCHOTTKY, S BAND, MIXER DIODE Silicon Schottky Diodes (Medium barrier diodes for detector and mixer applications Hermetical ceramic package) SILICON, MEDIUM BARRIER SCHOTTKY, X BAND, MIXER DIODE Silicon Schottky Diodes (Medium barrier diodes for detector and mixer applications Hermetical ceramic package) 硅肖特基二极管(培养基检测器和调音台的应用气密陶瓷封装垒二极管) Silicon Schottky Diodes (Medium barrier diodes for detector and mixer applications Hermetical ceramic package) SILICON, MEDIUM BARRIER SCHOTTKY, KU BAND, MIXER DIODE GaAs-IR-Lumineszenzdioden GaAs Infrared Emitters 砷化镓红外Lumineszenzdioden砷化镓红外辐射器
|
Siemens Semiconductor G... SIEMENS[Siemens Semiconductor Group] SIEMENS AG INFINEON TECHNOLOGIES AG
|
1N5472A 1N5466C TX-1N5469C TX-1N5468B TX-1N5446C 1 |
VHF-UHF BAND, 47 pF, 30 V, SILICON, ABRUPT VARIABLE CAPACITANCE DIODE, DO-7 VHF-UHF BAND, 18 pF, 30 V, SILICON, ABRUPT VARIABLE CAPACITANCE DIODE, DO-7 VHF-UHF BAND, 27 pF, 30 V, SILICON, ABRUPT VARIABLE CAPACITANCE DIODE, DO-7 VHF-UHF BAND, 22 pF, 30 V, SILICON, ABRUPT VARIABLE CAPACITANCE DIODE, DO-7 VHF-UHF BAND, 100 pF, 30 V, SILICON, ABRUPT VARIABLE CAPACITANCE DIODE, DO-7 VHF-UHF BAND, 10 pF, 30 V, SILICON, ABRUPT VARIABLE CAPACITANCE DIODE, DO-7 VHF-UHF BAND, 68 pF, 30 V, SILICON, ABRUPT VARIABLE CAPACITANCE DIODE, DO-7 VHF-UHF BAND, 20 pF, 30 V, SILICON, ABRUPT VARIABLE CAPACITANCE DIODE, DO-7 VHF-UHF BAND, 6.8 pF, 30 V, SILICON, ABRUPT VARIABLE CAPACITANCE DIODE, DO-7 VHF-UHF BAND, 56 pF, 30 V, SILICON, ABRUPT VARIABLE CAPACITANCE DIODE, DO-7 VHF-UHF BAND, 39 pF, 30 V, SILICON, ABRUPT VARIABLE CAPACITANCE DIODE, DO-7 VHF-UHF BAND, 8.2 pF, 30 V, SILICON, ABRUPT VARIABLE CAPACITANCE DIODE, DO-7 VHF-UHF BAND, 33 pF, 30 V, SILICON, ABRUPT VARIABLE CAPACITANCE DIODE, DO-7 VHF-UHF BAND, 12 pF, 30 V, SILICON, ABRUPT VARIABLE CAPACITANCE DIODE, DO-7
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